Void formation in P+ Ti-Salicided Polysilicon gate electrode in deep sub-quarter-micron CMOS Technology /
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| Main Author: | |
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| Format: | Thesis Book |
| Language: | English |
| Published: |
2000.
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| LEADER | 00741cam a2200205 a 4500 | ||
|---|---|---|---|
| 001 | u489789 | ||
| 003 | SIRSI | ||
| 008 | 990921s2000 si 00 0 eng | ||
| 035 | |a ACR-5094 | ||
| 040 | |a UMM | ||
| 090 | |a TK7 |b NUS 2000 Chu | ||
| 100 | 0 | 0 | |a Chua, Hwee Ngoh. |
| 245 | 1 | 0 | |a Void formation in P+ Ti-Salicided Polysilicon gate electrode in deep sub-quarter-micron CMOS Technology / |c Chua Hwee Ngoh. |
| 260 | |c 2000. | ||
| 300 | |a xv, 92 leaves : |b ill. ; |c 30 cm. | ||
| 502 | |a Dissertation (M.Eng.) -- National University of Singapore, 2000. | ||
| 504 | |a Bibliography : leaves 83-92. | ||
| 948 | |a 05/11/2001 |b 06/11/2002 | ||
| 596 | |a 1 | ||
| 999 | |a TK7 NUS 2000 CHU |w LC |c 1 |i A510540640 |l B_KOM4 |m P01UTAMA |r Y |s Y |t TESIS |u 13/11/2002 |o .PUBLIC. bkom 4 : 45742 | ||