Void formation in P+ Ti-Salicided Polysilicon gate electrode in deep sub-quarter-micron CMOS Technology /

Void formation in P+ Ti-Salicided Polysilicon gate electrode in deep sub-quarter-micron CMOS Technology /

محفوظ في:

التفاصيل البيبلوغرافية
المؤلف الرئيسي:	Chua, Hwee Ngoh
التنسيق:	أطروحة كتاب
اللغة:	English
منشور في:	2000.
الوسوم:	إضافة وسم لا توجد وسوم, كن أول من يضع وسما على هذه التسجيلة!

مواد مشابهة

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