Optical characterization of In(A1)GaN epilayers and quantum wells /

Optical characterization of In(A1)GaN epilayers and quantum wells /

محفوظ في:

التفاصيل البيبلوغرافية
المؤلف الرئيسي:	He, Yunpeng
التنسيق:	أطروحة كتاب
اللغة:	English
منشور في:	2001.
الوسوم:	إضافة وسم لا توجد وسوم, كن أول من يضع وسما على هذه التسجيلة!

مواد مشابهة

Investigation of zinc-blende GaN based strained quantum well laser /
بواسطة: Fan, Wei Jun
منشور في: (1996)

Growth of GaN-based LED on c-plane GaN substrate /
بواسطة: Sivanathan Pariasamy
منشور في: (2018)

Electrical and optical characterization of commercial GaN and InGaN LED subjected to electron radiation /
بواسطة: Anati Syahirah binti Hedzir
منشور في: (2017)

Optimization of AIN/GaN strained-layer superlattice for GaN Epitaxy on Si(111) substrate /
بواسطة: Yusnizam Yusuf
منشور في: (2017)

DC And RF Characterization Of n-GaN Schottky Diode For Microwave Application
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منشور في: (2011)

A1GaN Thin Films On Silicon Substrates For Photodetector And Transistor Devices
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منشور في: (2011)

Study of intersubband transitions in InGaAs/GaAs quantum wells /
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منشور في: (1996)

First-principles study of structural, electronic and optical properties of AlN, GaN, InN and BN compounds
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منشور في: (2013)

Electronic structure and excitation in Ga1-xA1xAs quantum wells /
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منشور في: (1996)

Pembangunan sistem sensor sinaran ultra lembayung berasaskan fotodiod A1GaN /
بواسطة: Juliah Theyirakumar

Epitaxial Growth Of Gan On Gan Multi Quantum Well For The Deep Green Light Emitting Diode
بواسطة: Abdul Rais, Shamsul Amir
منشور في: (2022)

PA-MBE GaN-Based Optoelectronics on Silicon Substrates
بواسطة: Chuah , Lee Siang
منشور في: (2009)

Surface and interface investigations of InSb, GaSb, CdTe, InGaN and GaN epitaxial semiconductor thin films /
بواسطة: Li, Kun
منشور في: (1997)

Low power impulse magnetron's cathode sputtering using GaN and SiC plasma for modulated microwave power transmission system /
بواسطة: Leong, Wen Chek
منشور في: (2016)

A study of GaAs/InGaAs/AIAs stepped quantum wells by C-V profiling /
بواسطة: Mohd. Edee Rozey Abd. Manaf
منشور في: (2001)

Electrochemical And Radio Frequency Sputtering Growth Of GaN Nanostructures On Porous Silicon
بواسطة: Shamsuddin, Siti Nur Atikah
منشور في: (2019)

Al-Ta2O5-GaN Semiconductor Device Structure
بواسطة: Yeoh, Lai Seng
منشور في: (2014)

Synthesis Of Gallium Nitride (GaN) Nanostructures By Electrochemical Techniques For Sensing Applications
بواسطة: Al-Heuseen, Khalled Mhammad Kallef
منشور في: (2011)

Low-temperature grown semiconducting GaAs epilayer on Si by molecular beam epitaxy and its application to laser diodes /
بواسطة: Phua, Cheng Chiang
منشور في: (1997)

Polycrystalline GaN Layer On M-Plane Sapphire Substrate For Metal-Semiconductor-Metal Photodetector
بواسطة: Kamarulzaman, Azharul Ariff
منشور في: (2017)

The Growth Of GaN-Based Low Dimensional Structures By CVD Using Platinum And Palladium Catalysts
بواسطة: Lay Kim, Tan
منشور في: (2019)

Simulation of performance on multi-quantum-well violet InGaN laser diode and analysis of its output for digital modulation
بواسطة: Abdullah, Rafid A.
منشور في: (2010)

Intersubband transitions in quantum well infrared photodetector /
بواسطة: Cheah, Chin Wei
منشور في: (2001)

Study on the characteristics of A1GaAs/GaAs HEMT under illumination /
بواسطة: Huang, Yajian
منشور في: (2001)

Theoretical comparison of tensile strained inGaAs/InA1GaAs and InGaAs/InGaAsP QW lasers emitting at 1.55 um /
بواسطة: Khoo, Hong Khai
منشور في: (1999)

Crystal quality enhancement of semi-polar (11-22) InGaN/GaN-based LED grown on m-plane sapphire substrate via MOCVD /
بواسطة: Fadhil, Omar Ayad
منشور في: (2019)

Multicolor infrared detection using step quantum wells /
بواسطة: Mei, Ting
منشور في: (1999)

Study of MBE grown AIInGaAs/AIGaAs quantum wells and their application in semiconductor lasers /
بواسطة: Zhang, Zhihe
منشور في: (1997)

Growth of semi-polar (11-22) GaN epitaxial layer on M-plane sapphire via MOCVD /
بواسطة: Mohd Afiq Anuar
منشور في: (2020)

Design and fabrication of 980nm wavelength quantum well laser /
بواسطة: Ke, Lin
منشور في: (1999)

Design And Optimization Of Multi-Quantum Wells For GaAs Based Vertical Cavity Surface Emitting Lasers
بواسطة: Jasim, Farah Z.
منشور في: (2011)

Growth of non-polar (11-20) A-plane GaN based leds grown on (1-120) R-plane sapphire substrate via MOCVD /
بواسطة: Anas Kamarundzaman
منشور في: (2022)

Fabrication and characterization of porous Si and porous GaN by integrated pulse electrochemical etching for potential optoelectronic application / Nurul Syuhadah Mohd Razali
بواسطة: Mohd Razali, Nurul Syuhadah
منشور في: (2021)

Study of LT-GaAs and LT-A1(0.3)Ga(0.7A)As MISFET devices /
بواسطة: Rao, Rapeta V.V.V. Jagannadha
منشور في: (2000)

Aluminium nitride (AlN) as buffer layer for deposition of gallium nitride (GaN) thin films on silicon substrates using magnetron sputtering technique
بواسطة: Tahan, Muliana
منشور في: (2021)

Structural And Optical Properties Of AlxInyGa1-x-yN Thin Films
بواسطة: Abed, Muslim A.
منشور في: (2012)

A novel readout integrated circuit for quantum well infrared photodetector focal plane arrays /
بواسطة: Chee, Yuen Hui
منشور في: (2000)

Donor states in a quantum well /
بواسطة: Yip, Yew Tong
منشور في: (1998)

Gallium Nitride (GaN) Based Gas Sensor Using Catalytic Metal [TK7871.15.G33 H884 2005 f rb].
بواسطة: Omer Hudeish, Abdo Yahya
منشور في: (2005)

Structural And Optical Studies Of Wide Band-Gap AlxGa1-xN (0 ≤ x ≤ 1) Semiconductors [TK7871.85. N577 2007 f rb].
بواسطة: Ng, Sha Shiong
منشور في: (2007)

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