I-V hysteresis characterization of deep-submicron mos devices /
Saved in:
| Main Author: | |
|---|---|
| Format: | Thesis Book |
| Language: | English |
| Published: |
2002.
|
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| LEADER | 00695cam a2200205 a 4500 | ||
|---|---|---|---|
| 001 | u511504 | ||
| 003 | SIRSI | ||
| 008 | 000606s2002 si v 00 1 eng | ||
| 035 | |a ACX-8259 | ||
| 040 | |a UMM | ||
| 090 | |a TK7 |b NUS 2002 Xia | ||
| 100 | 1 | 0 | |a Xia, Jinghua |
| 245 | 1 | 0 | |a I-V hysteresis characterization of deep-submicron mos devices / |c by Xia Jinghua. |
| 260 | |c 2002. | ||
| 300 | |a xix, 100 leaves : |b ill. ; |c 30 cm. | ||
| 502 | |a Dissertation (M.Eng.) -- National University of Singapore, 2002. | ||
| 504 | |a Bibliography: leaves 26-31. | ||
| 948 | |a 06/05/2003 |b 08/05/2003 | ||
| 596 | |a 1 | ||
| 999 | |a TK7 NUS 2002 XIA |w LC |c 1 |i A511031199 |l B_KOM4 |m P01UTAMA |r Y |s Y |t TESIS |u 19/5/2003 |o .PUBLIC. BKOM 4 : 46032 | ||