Simulation of 0.1um Mos devices for logic and memory technologies /
Saved in:
| Main Author: | |
|---|---|
| Format: | Thesis Book |
| Language: | English |
| Published: |
2002.
|
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| LEADER | 00716nam a2200205 a 4500 | ||
|---|---|---|---|
| 001 | u511804 | ||
| 003 | SIRSI | ||
| 008 | 000224s2002 si v 00 10 eng m | ||
| 035 | |a ACX-8752 | ||
| 040 | |a UMM | ||
| 090 | |a TK7 |b NUS 2002 Poh | ||
| 100 | 1 | 0 | |a Poh, Francis Yong Wee. |
| 245 | 1 | 0 | |a Simulation of 0.1um Mos devices for logic and memory technologies / |c Poh Yong Wee Francis. |
| 260 | |c 2002. | ||
| 300 | |a xv, 166 leaves : |b ill. ; |c 30 cm. | ||
| 502 | |a Dissertation (M.Eng.) -- National University of Singapore, 2002. | ||
| 504 | |a Bibliography: leaves 113-137. | ||
| 948 | |a 12/05/2003 |b 12/05/2003 | ||
| 596 | |a 1 | ||
| 999 | |a TK7 NUS 2002 POH |w LC |c 1 |i A511034703 |l B_KOM4 |m P01UTAMA |r Y |s Y |t TESIS |u 19/5/2003 |o .PUBLIC. BKOM 4 : 45972 | ||