Simulation of 0.1um Mos devices for logic and memory technologies /

Simulation of 0.1um Mos devices for logic and memory technologies /

محفوظ في:

التفاصيل البيبلوغرافية
المؤلف الرئيسي:	Poh, Francis Yong Wee
التنسيق:	أطروحة كتاب
اللغة:	English
منشور في:	2002.
الوسوم:	إضافة وسم لا توجد وسوم, كن أول من يضع وسما على هذه التسجيلة!

مواد مشابهة

Fabrikasi dan pencirian teknologi 0.13 um nMOS
بواسطة: Ahmad, Afandi
منشور في: (2003)

I-V hysteresis characterization of deep-submicron mos devices /
بواسطة: Xia, Jinghua
منشور في: (2002)

Design of capacitive sensor interfacing circuit using 0.18 um complementary metal oxide semiconductor technology /
بواسطة: Hoveizavi, Fatemeh Banitorfian
منشور في: (2011)

Fabrication of sub-0.5um high electron mobility transistors /
بواسطة: Lee, Kay Ming
منشور في: (1998)

Photoresist trimming technique in high-density oxygen-based plasmas for sub-0.1 um mosfet fabrication using 248-nm lithography /
بواسطة: Sin, Chian Yuh
منشور في: (2002)

Tunable high speed pulse generator for Phase Change Memory (PCM) using 0.13um technology / Munirah Rasin
بواسطة: Rasin, Munirah
منشور في: (2015)

Design and stimulation of a tunable band pass filter using 0.18 um CMOS /
بواسطة: Thangasamy, Veeraiyah
منشور في: (2011)

Study of LT-GaAs and LT-A1(0.3)Ga(0.7A)As MISFET devices /
بواسطة: Rao, Rapeta V.V.V. Jagannadha
منشور في: (2000)

Degradation and annealing of electrically-stressed thin oxide in MOS devices /
بواسطة: Ng, Wee Thong
منشور في: (1998)

Simulation of multi tip-sail winglet for drag reduction at mach 0.1 / Muhammad Ridzwan Ramli
بواسطة: Ramli, Muhammad Ridzwan
منشور في: (2023)

Tunneling in reliability study of MOS structures /
بواسطة: Ma, Siguang
منشور في: (1999)

Comparison between bupivacaine 0.1% with fentanyl 2 æg/ml and ropivacaine 0.1% with fentanyl 2 æg/ml using patient controlled epidural analgesia for labour /
بواسطة: Zulkifli Mohamed Haris

Effect of X-ray lithography on MOS device reliability /
بواسطة: Kim, Sun Jung
منشور في: (2001)

Predictive process and device simulation of mosfet devices /
بواسطة: Lee, Siew Weng
منشور في: (2000)

Flicker noise characterization of trapping effects in submicrometer Mos transistors /
بواسطة: Yeo, Boon Pian
منشور في: (1998)

Electrical Characterization of Ca1-Xaxcu3ti4o12 (A = Sr or Ba) With X = 0.0, 0.1, 0.2, 0.3, 0.4, 0.5 Ceramics
بواسطة: Mustafa, Mazni
منشور في: (2008)

New techniques for the characterization of hot-carrier degradation in MOS devices /
بواسطة: Leang, Sern Ee
منشور في: (1997)

Design of 8T SRAM and sense amplifier 0.18um CMOS technology / Rozita Muhammad
بواسطة: Muhammad, Rozita
منشور في: (2013)

Effect of 0.1 mg intrathecal morphine on quality and duration of analgesia after caesarean section /
بواسطة: Sheliza Jamil
منشور في: (2007)

Characterization of mos transistor mismatch for sub-micron process in analog application /
بواسطة: Yeo, Siok Been
منشور في: (2002)

Synthesis and electrochemical performance of solid solution of layered nanostructured LiCo₁ˍₓ Niₓ O₂ (х = 0.0, 0.1, ..., 0.9) / Kelimah Elong
بواسطة: Elong, Kelimah
منشور في: (2013)

Reliability investigation of MOS devices under high current impulse stressing /
بواسطة: Teh, Gim Leong
منشور في: (1998)

A 1.8v 10-Bit 100ms/S Fully Differential Pipelined Adc In Cmos 0.18um Process Technology
بواسطة: Khoo , Boon Hee
منشور في: (2017)

Development Of Inductively-Degenerated LNA For W-CDMA Application Utilizing 0.18 Um RFCMOS Technology
بواسطة: Mohd. Noh, Norlaili
منشور في: (2009)

Analog ic design of the digital to analog converter in 0.5um CMOS technology / Norsyidah Abdullah
بواسطة: Abdullah, Norsyidah
منشور في: (2006)

Clock gating techniques using 0.18um CMOS technology / Muhammad Syafiq Ab Rahim
بواسطة: Ab Rahim, Muhammad Syafiq
منشور في: (2011)

Comparative study of conventional and modified level shifter in 0.18um technology / Jared Anak Jahari
بواسطة: Jahari, Jared
منشور في: (2013)

Integration of Cu interconnects for sub-0.25 um manufacturing /
بواسطة: Yap, Kuan Pei
منشور في: (1999)

Simulation of in-memory logic circuit based on probabilistic memristor using LTSPICE
بواسطة: Ng, Yuh Chyn
منشور في: (2022)

Q-switched erbium-doped fiber laser based on MOS2 as saturable absorber /
بواسطة: Ferdous, Md. Ehetisham
منشور في: (2016)

Plasma process-induced damage to oxide/nitride/oxide (ONO) interpoly dielectric in flash memory devices /
بواسطة: Cha, Cher Liang
منشور في: (2001)

Design of silicon nitride metal-insulator-metal capacitor using 0.15 um gallium arsenide technology
بواسطة: Sanusi, Rasidah
منشور في: (2010)

Theoretical comparison of tensile strained inGaAs/InA1GaAs and InGaAs/InGaAsP QW lasers emitting at 1.55 um /
بواسطة: Khoo, Hong Khai
منشور في: (1999)

Kajian ketumpatan arus genting angkutan pita superkonduktor sarungan Ag (T1,Cr0.15) Sr2(Ca0.9,Pr0.1) Cu2O7 /
بواسطة: Chen, Soo Kien
منشور في: (2002)

Device Characterization of 0.8-µm CMOS Technology
بواسطة: Kooh, Roy Jinn Chye
منشور في: (2000)

Effect of preoperative use of topical ketorolac tromethamine 0.5%, nepafenac 0.1% or placebo in maintaining pupillary dilation and minimizing flare during phacoemulsification /
بواسطة: Siti Zakiah Md Khair

Modelling and simulation of hot-carrier degradation in submicrometre MOS transistors /
بواسطة: Seah, Boon Pian
منشور في: (1995)

Row decoder and row driver custom design using 0.18 um CMOS technology / Md Aizuddin Rosdan
بواسطة: Rosdan, Md Aizuddin
منشور في: (2013)

Power efficient 64-BIT dynamic comparator using 0.18um technology / Mohd Khushairi Mohd Zaidi
بواسطة: Mohd Zaidi, Mohd Khushairi
منشور في: (2013)

On-chip and active device modeling and simulation in RF(MM)ICs /
بواسطة: Pan, Shujun
منشور في: (2002)

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