Sin, C. Y. (2002). Photoresist trimming technique in high-density oxygen-based plasmas for sub-0.1 um mosfet fabrication using 248-nm lithography.
Chicago Style (17th ed.) CitationSin, Chian Yuh. Photoresist Trimming Technique in High-density Oxygen-based Plasmas for Sub-0.1 Um Mosfet Fabrication Using 248-nm Lithography. 2002.
MLA引文Sin, Chian Yuh. Photoresist Trimming Technique in High-density Oxygen-based Plasmas for Sub-0.1 Um Mosfet Fabrication Using 248-nm Lithography. 2002.
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