APA引文

Sin, C. Y. (2002). Photoresist trimming technique in high-density oxygen-based plasmas for sub-0.1 um mosfet fabrication using 248-nm lithography.

Chicago Style (17th ed.) Citation

Sin, Chian Yuh. Photoresist Trimming Technique in High-density Oxygen-based Plasmas for Sub-0.1 Um Mosfet Fabrication Using 248-nm Lithography. 2002.

MLA引文

Sin, Chian Yuh. Photoresist Trimming Technique in High-density Oxygen-based Plasmas for Sub-0.1 Um Mosfet Fabrication Using 248-nm Lithography. 2002.

警告:這些引文格式不一定是100%准確.