Laser annealing of donor implanted gallium arsenide /
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| Main Author: | |
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| Format: | Thesis Book |
| Language: | English |
| Published: |
1981.
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| LEADER | 00904cam a2200265 4500 | ||
|---|---|---|---|
| 001 | u51327 | ||
| 003 | SIRSI | ||
| 008 | 870807s1981 uk a v 00 1 eng m | ||
| 035 | |a AAF-5217 | ||
| 040 | |a UMM | ||
| 090 | 0 | 0 | |a TK7871.15 |b G3Aki |
| 100 | 1 | 0 | |a Akintunde, J. A. |
| 245 | 1 | 0 | |a Laser annealing of donor implanted gallium arsenide / |c by J.A. Akintunde |
| 260 | |c 1981. | ||
| 300 | |a 182 leaves : |b ill. ; |c 29 cm. | ||
| 500 | |a Photocopy. Boston Spa : Document supply Centre, British Library, 1982. | ||
| 502 | |a Thesis (Ph.D.) - University of Surrey, 1981. | ||
| 504 | |a Includes bibliographies. | ||
| 650 | 0 | |a Gallium arsenide semiconductors |x Effect of lasers on. | |
| 650 | 0 | |a Ion implantation. | |
| 650 | 0 | |a Semiconductor doping. | |
| 650 | 0 | |a Lasers. | |
| 948 | |a 16/03/1991 |b 15/08/1998 | ||
| 596 | |a 1 | ||
| 999 | |a F TK7871.15 G3AKI |w LC |c 1 |i A010103541 |d 18/8/1998 |l STACKS |m P01UTAMA |n 2 |r Y |s Y |t TESIS |u 19/2/1992 | ||