Study of LT-GaAs and LT-A1(0.3)Ga(0.7A)As MISFET devices /
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| Main Author: | |
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| Format: | Thesis Book |
| Language: | English |
| Published: |
2000
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| LEADER | 00851cam a2200217 a 4500 | ||
|---|---|---|---|
| 001 | u685021 | ||
| 003 | SIRSI | ||
| 008 | 000929s2000 si v 00 10 eng m | ||
| 035 | |a ACM-3577 | ||
| 040 | |a UMM | ||
| 090 | |a TK7 |b NUSP 2000 Rao | ||
| 100 | 1 | 0 | |a Rao, Rapeta V.V.V. Jagannadha. |
| 245 | 1 | 0 | |a Study of LT-GaAs and LT-A1(0.3)Ga(0.7A)As MISFET devices / |c by Rapeta V.V.V. Jagannadha Rao. |
| 260 | |c 2000 | ||
| 300 | |a xxi, 209 leaves : |b ill. ; |c 30 cm. | ||
| 502 | |a Thesis (Ph.D.) -- Dept. of Electrical Engineering, Faculty of Eggineering, National University of Singapore, 2000. | ||
| 504 | |a Bibliography: leaves 190-209. | ||
| 650 | 0 | |a Gallium arsenide semiconductors. | |
| 948 | |a 03/10/2000 |b 13/05/2004 | ||
| 596 | |a 1 | ||
| 999 | |a TK7 NUSP 2000 RAO |w LC |c 1 |i A509932961 |d 10/7/2006 |f 10/7/2006 |g 1 |l B_KOM4 |m P01UTAMA |r Y |s Y |t TESIS |u 8/2/2005 |o .PUBLIC. BKOM 4 : 46039 | ||