Latent damage generation in silicon dioxide under high-field impulse and constant-bias stressing /

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Bibliographic Details
Main Author: Lim, Peng Soon
Format: Thesis Book
Language:English
Published: 2001.
Subjects:
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035 |a ACW-4843 
040 |a UMM 
090 |a TK7  |b NUSP 2001 Lim 
100 1 0 |a Lim, Peng Soon. 
245 1 0 |a Latent damage generation in silicon dioxide under high-field impulse and constant-bias stressing /  |c Lim Peng Soon. 
260 |c 2001. 
300 |a xxvi, 173 leaves :  |b ill. ;  |c 30 cm. 
502 |a Thesis (Ph.D.) -- Dept. of Electrical & Computer Engineering, Faculty of Engineering, National University of Singapore, 2001. 
504 |a Includes bibliographical references. 
650 0 |a Silica. 
650 0 |a Metal oxide semiconductor field-effect transistors  |x Reliability 
948 |a 26/11/2002  |b 26/08/2004 
596 |a 1 
999 |a TK7 NUSP 2001 LIM  |w LC  |c 1  |i A510653108  |d 17/7/2006  |f 17/7/2006  |g 1  |l B_KOM4  |m P01UTAMA  |r Y  |s Y  |t TESIS  |u 14/2/2005  |o .PUBLIC. BKOM 4 :43105