Latent damage generation in silicon dioxide under high-field impulse and constant-bias stressing /

Latent damage generation in silicon dioxide under high-field impulse and constant-bias stressing /

Saved in:

書目詳細資料
主要作者:	Lim, Peng Soon
格式:	Thesis 圖書
語言:	English
出版:	2001.
主題:	Silica. Metal oxide semiconductor field-effect transistors > Reliability
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

相似書籍

Characterization of pmosfet degradation in negative bias temperature instability test /
由: Soon, Foo Yew
出版: (2012)

Reliability investigation of MOS devices under high current impulse stressing /
由: Teh, Gim Leong
出版: (1998)

Development of empirical potential profile model for unusual energy separation of subbands in inidium-absorbed Si(111) inversion layer /
由: Nur Idayu binti Ayob
出版: (2015)

Optimization and characterization of 130 Nm CMOS transistor design using TCAD simulation /
由: Hani Noorashiqin Abd Majid
出版: (2007)

A study on the impact of processing parameters on low-voltage power MOSFET /
由: Nur Aqilah Othman
出版: (2012)

Extraction of submicron mosfet parameters /
由: Seah, Kah Suan
出版: (1997)

New techniques for the characterization of hot-carrier degradation in MOS devices /
由: Leang, Sern Ee
出版: (1997)

A study of long and short channel NMOSFET on threshold voltage /
由: Norseha Ariffin
出版: (2013)

Carrier lifetime characterization techniques in SOI and bulk silicon /
由: Cheng, Zhiyuan
出版: (1999)

Simulation of charge-trapping in nano-scale mosfets in the presence of random-dopants-induced variability /
由: Muhammad Faiz Bukhori
出版: (2011)

The effect of doping concentration on the characteristics of n-channel MOSFET /
由: Teen, Soh Hong
出版: (2005)

A study of hot carrier degradation in LDMOS transistor /
由: Atikah Razi
出版: (2013)

Impact of fabrication process on hot carrier injection in VDMOS transistor /
由: Murti, Wijaya Bayu
出版: (2013)

A study on hot carrier effect (HCE) on LDD n-MOSFET /
由: Haziezol Helmi Mohd Yusof
出版: (2013)

A study on the impact of processing parameters on silicon-on-insulator power MOSFET /
由: Noraziah Abd Wahab
出版: (2013)

Design and construction of charge pumping technique for MOS transistor characterization /
由: Lee, Hock Guan
出版: (2004)

Fault tolerance of L1 data cache memory induced by intrinsic parameters fluctuation in sub 10nm UTB-SOI MOSFETs
由: Ahmed, Rabah Abood
出版: (2013)

Characterization of hot-carrier degradation in submicrometer MOS transistors /
由: Ang, Diing Shenp
出版: (1997)

Evaluation of hot-carrier degradation in submicrometre MOSFETs by gate capacitance and charge pumping current measurements /
由: Tan, Suat Eng
出版: (1997)

Hot-carrier degradation study in MOSFET's by charge pumping, gated-diode and floating gate techniques /
由: Goh, Yong Han
出版: (1997)

The lateral profiling of interface state and oxide charge densities in electrically stressed MOSFET's /
由: Hoon, Siew Kuok
出版: (1998)

A study of hot-carrier degradation in nitrided and conventional oxides /
由: Goo, Kah Heong
出版: (1998)

Hot-carrier effects in thin gate oxide MOSFET's /
由: See, Leng Kian
出版: (1998)

Hot-carrier characterization of submicrometer MOS transistors : subthreshold degradation and channel-width effect /
由: Qin, Wei Han
出版: (1998)

Hot-carrier studies in submicrometer SOI and conventional MOSFETs /
由: Yip, Anselm
出版: (1998)

A study on the effects of design parameters on PD SOI MOSFET /
由: Nurul Azimah Ahmad Arzaai
出版: (2013)

Junctionless transistors: parametric study with conventional doping in MOSFETS

Performance of advanced-process and multi-gated mosfets based on geometric and process design considerations /
由: Fazliyatul Azwa Md Rezali
出版: (2017)

Degradation analysis based on design considerations of advanced-process MOSFET /
由: Ainul Fatin Muhammad Alimin
出版: (2018)

Electrical characterization of bulk traps and interface traps in the fully-depleted SOI MOSFET /
由: Lun, Zhao
出版: (2002)

A study of hot-carrier effects using photon emission spectroscopy /
由: Tao, Jing Mei
出版: (1997)

Numerical simulations of innovative ground plane and double-gate configurations in thin-body and -buried oxide of SOI MOSFETS

Lateral Diffused Metal Oxide Semiconductor (LDMOS) transistor Safe Operating Area (HCI-SOA) characterization under hot carrier injection /
由: Sharifah Shafini Syed Shahabuddin
出版: (2013)

CMOS compatible vertical surround gate mosfets with reduced parasitics /
由: Kunz, Veit Dominik
出版: (2003)

Integration of nanoporous structure into vertical organic field effect transistor /
由: Muhammad Zharfan Mohd Halizan
出版: (2018)

Negative bias temperature instability and permittivity dependent delay mitigation in High-K metal oxide compatible cmos dielectric /
由: Karim, Nissar Mohammad
出版: (2015)

Fabrication and characterization of microfluidic field effect transistor on silicon substrate
由: Maizatul, Zolkapli

Simulation framework of NBTI degradation in nano-scale p-mosfets from the perspective of hydrogen and non-hydrogen transport formalism /
由: Hanim Hussin
出版: (2015)

Structural and optical properties of deposited zinc oxide on integrated pulsed electrochemical porous silicon / Nurul Hanida Abd Wahab
由: Abd Wahab, Nurul Hanida
出版: (2020)

Enhanced photocatalytic degradation of methylene blue using zinc oxide nanoparticles grown on microscopic silicon dioxide /
由: Nur Azmina Mohamed Safian
出版: (2019)

Services hosted by the Perpustakaan Sultan Abdul Samad, Universiti Putra Malaysia with Cooperation MySyL Group