Plasma process-induced damage to oxide/nitride/oxide (ONO) interpoly dielectric in flash memory devices /
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| Main Author: | |
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| Format: | Thesis Book |
| Language: | English |
| Published: |
2001.
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| LEADER | 00918cam a2200229 a 4500 | ||
|---|---|---|---|
| 001 | u692576 | ||
| 003 | SIRSI | ||
| 008 | 991117s2001 si v 00 0 eng m | ||
| 035 | |a ACX-0800 | ||
| 040 | |a UMM | ||
| 090 | |a TK7 |b NUSP 2001 Cha | ||
| 100 | 1 | 0 | |a Cha, Cher Liang. |
| 245 | 1 | 0 | |a Plasma process-induced damage to oxide/nitride/oxide (ONO) interpoly dielectric in flash memory devices / |c Cha Cher Liang. |
| 260 | |c 2001. | ||
| 300 | |a xviii, 117 leaves : |b ill. ; |c 30 cm. | ||
| 502 | |a Thesis (Ph.D.) -- Dept. of Electrical & Computer Engineering, Faculty of Engineering, National University of Singapore, 2002. | ||
| 504 | |a Bibliography: leaves 140-165. | ||
| 650 | 0 | |a Plasma devices |x Defects. | |
| 650 | 0 | |a Ferroelectric storage cells. | |
| 948 | |a 11/02/2003 |b 02/08/2004 | ||
| 596 | |a 1 | ||
| 999 | |a TK7 NUSP 2001 CHA |w LC |c 1 |i A510986553 |d 17/7/2006 |f 17/7/2006 |g 1 |l B_KOM4 |m P01UTAMA |r Y |s Y |t TESIS |u 21/2/2005 |o .PUBLIC. BKOM 4 :43096 | ||