Effect of annealing on direct current and pulse PECVD hydrogenated amorphous silicon /

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Bibliographic Details
Main Author: Lim, Seck Chai
Format: Thesis Book
Language:English
Published: 2004.
Subjects:
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040 |a UMM 
090 |a TA403  |b UM 2004 Lim 
100 1 0 |a Lim, Seck Chai 
245 1 0 |a Effect of annealing on direct current and pulse PECVD hydrogenated amorphous silicon /  |c Lim Seck Chai. 
260 |c 2004. 
300 |a [xiii], 139 leaves :  |b ill. ;  |c 30cm 
502 |a Dissertation (M.Tech. (Material Sc.)) -- Jabatan Fizik, Fakulti Sains, Universiti Malaya, 2005. 
504 |a Bibliography: leaves 130-134. 
650 0 |a Amorphous semiconductors. 
650 0 |a Plasma-enhanced chemical vapor deposition. 
650 0 |a Annealing of metals. 
710 |a Universiti Malaya.  |b Jabatan Fizik. 
596 |a 1 
999 |a TA403 UM 2004 LIM  |w LC  |c 1  |i A511937907  |d 19/9/2006  |f 19/9/2006  |g 1  |l STACKS  |m P01UTAMA  |r Y  |s Y  |t TESIS  |u 18/9/2006