Hoveizavi, F. B. (2011). Design of capacitive sensor interfacing circuit using 0.18 um complementary metal oxide semiconductor technology.
Chicago Style (17th ed.) CitationHoveizavi, Fatemeh Banitorfian. Design of Capacitive Sensor Interfacing Circuit Using 0.18 Um Complementary Metal Oxide Semiconductor Technology. 2011.
MLA引文Hoveizavi, Fatemeh Banitorfian. Design of Capacitive Sensor Interfacing Circuit Using 0.18 Um Complementary Metal Oxide Semiconductor Technology. 2011.
警告:這些引文格式不一定是100%准確.