A study of hot carrier degradation in LDMOS transistor /
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| Main Author: | |
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| Format: | Thesis Book |
| Language: | English |
| Published: |
2013.
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| Subjects: | |
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| LEADER | 01210cam a2200289 a 4500 | ||
|---|---|---|---|
| 001 | u876393 | ||
| 003 | SIRSI | ||
| 005 | 201303201740 | ||
| 008 | 130320s2013 my a t 000 0 eng m | ||
| 040 | |a UMM |d UMJ |e rda | ||
| 090 | |a TK7 |b UM 2013 Atir | ||
| 097 | |a TK7 |b UM 2013 Atir | ||
| 100 | 0 | |a Atikah Razi. | |
| 245 | 1 | 2 | |a A study of hot carrier degradation in LDMOS transistor / |c Atikah binti Razi. |
| 260 | |c 2013. | ||
| 300 | |a xvi, 117 leaves : |b ill. ; |c 30 cm. | ||
| 502 | |a Dissertation (M.Eng.) -- Jabatan Kejuruteraan Elektrik, Fakulti Kejuruteraan, Universiti Malaya, 2013. | ||
| 504 | |a Bibliography: leaves 103-106. | ||
| 650 | 0 | |a Metal oxide semiconductors. | |
| 650 | 0 | |a Metal oxide semiconductor field-effect transistors. | |
| 650 | 0 | |a Hot carriers. | |
| 710 | 2 | |a Universiti Malaya. |b Jabatan Kejuruteraan Elektrik. | |
| 900 | |a AT-ZA | ||
| 596 | |a 1 7 | ||
| 999 | |a TK7 UM 2013 ATIR |w LC |c 1 |i A515558987 |d 27/11/2013 |f 27/11/2013 |g 1 |l STACKS |m P01UTAMA |r Y |s Y |t TESIS |u 26/11/2013 | ||
| 999 | |a TK7 UM 2013 ATIR |w LC |c 1 |i A516085872 |d 6/1/2015 |f 6/1/2015 |g 1 |l STACKS |m P07JURUTER |r N |s Y |t TESIS |u 6/1/2015 | ||
| 999 | |a TK7 UM 2013 ATIR |w LC |c 2 |i A516086728 |d 6/1/2015 |f 6/1/2015 |g 1 |l COUNTER |m P07JURUTER |r N |s Y |t CD |u 6/1/2015 | ||