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  1. 1
    High quality single-crystalline aluminum nitride grown using pulsed atomic-layer epitaxy technique by MOCVD on sapphire substrate /
    by Mohd Nazri Abd Rahman
    Published 2021
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  2. 2
    Epitaxial growth of semi-polar (11-22) Gallium nitride for UV photosensing application /
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  3. 3
    Growth of non-polar (11-20) A-plane GaN based leds grown on (1-120) R-plane sapphire substrate via MOCVD /
    by Anas Kamarundzaman
    Published 2022
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  4. 4
    Growth of GaN-based LED on c-plane GaN substrate /
    by Sivanathan Pariasamy
    Published 2018
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  5. 5
    Crystal quality enhancement of semi-polar (11-22) InGaN/GaN-based LED grown on m-plane sapphire substrate via MOCVD /
    by Fadhil, Omar Ayad
    Published 2019
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  6. 6
    Modeling and simulation of metal organic halide vapor phase epitaxy growth chamber reactor /
    by Nurul Zieyana Mohamed Annuar
    Published 2013
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