Effects of isotopic neutron emission on silicon substrate /
The use of silicon material in electronic devices has grown rapidly and efforts have been made to develop techniques for growing perfect Si crystal with increasing dimension. Nonetheless, for the power devices to work at designated power levels and voltage reading, it is necessary to dope the silico...
Saved in:
主要作者: | Roslan bin Yahya |
---|---|
格式: | Thesis |
语言: | English |
出版: |
Gombak, Selangor :
Kulliyyah of Engineering, International Islamic University Malaysia,
2009
|
主题: | |
在线阅读: | http://studentrepo.iium.edu.my/handle/123456789/4734 |
标签: |
添加标签
没有标签, 成为第一个标记此记录!
|
相似书籍
-
Optical absorption studies of heavily doped silicon /
由: Aw, Siew Eng
出版: (1986) -
Computer controlled transient capacitance measurement and analysis of deep levels in semiconductors /
由: Wu, Zongmin
出版: (1996) -
Pulsed laser illumination of ion implanted silicon /
由: Wilson, Martin Clive
出版: (1983) -
Studies of UV-irradiation effects on the recombination lifetime of silicon wafer /
由: Lee, Wah Pheng
出版: (1996) -
Blue-shift of effective band-gap in n-i-p-i doping superlattices as a function of optical excitation intensity /
由: Bastola, Subas
出版: (1997)