Commercial SiGe and GaAs as low noise amplifiers (LNA) performance under electron radiation /
In this dissertation, a characterization and comparison between the effects of Electron irradiation on low noise amplifiers (LNAs) implemented in a Silicon-Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) and Gallium-Arsenide (GaAs) HBT technologies, respectively, was carried out. Nowadays,...
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| 格式: | Thesis |
| 语言: | English |
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Kuala Lumpur :
Kulliyyah of Engineering, International Islamic University Malaysia,
2016
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| 在线阅读: | Click here to view 1st 24 pages of the thesis. Members can view fulltext at the specified PCs in the library. |
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