Optimisation of Mean Multiplication Gain and Excess Noise Factor in A1xGa1-xN Ultraviolet Avalanche Photodiodes
The Monte Carlo (MC) simulation on Gallium Nitride (GaN) and Aluminium Gallium Nitride (AlxGa1-xN, where x = 0.3, 0.45, 0.7) are presented. This work aims to study the AlxGa1-xN avalanche photodiodes (APDs) and optimise the AlxGa1-xN APDs. AlxGa1-xN development has been hampered by the difficulty in...
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2020
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