Optimisation of Mean Multiplication Gain and Excess Noise Factor in A1xGa1-xN Ultraviolet Avalanche Photodiodes

The Monte Carlo (MC) simulation on Gallium Nitride (GaN) and Aluminium Gallium Nitride (AlxGa1-xN, where x = 0.3, 0.45, 0.7) are presented. This work aims to study the AlxGa1-xN avalanche photodiodes (APDs) and optimise the AlxGa1-xN APDs. AlxGa1-xN development has been hampered by the difficulty in...

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Main Author:	Ooi, Wesley Tat Lung
Format:	Thesis
Published:	2020
Subjects:	TK5101-6720 Telecommunication Including telegraphy, telephone, radio, radar, television
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spelling	my-mmu-ep.111472023-02-24T04:18:16Z Optimisation of Mean Multiplication Gain and Excess Noise Factor in A1xGa1-xN Ultraviolet Avalanche Photodiodes 2020-10 Ooi, Wesley Tat Lung TK5101-6720 Telecommunication. Including telegraphy, telephone, radio, radar, television The Monte Carlo (MC) simulation on Gallium Nitride (GaN) and Aluminium Gallium Nitride (AlxGa1-xN, where x = 0.3, 0.45, 0.7) are presented. This work aims to study the AlxGa1-xN avalanche photodiodes (APDs) and optimise the AlxGa1-xN APDs. AlxGa1-xN development has been hampered by the difficulty in growing high quality AlxGa1-xN layer due to high lattice defect which necessitates the MC simulation. The scattering mechanisms such as polar optical phonon scattering, nonpolar optical phonon scattering, acoustic phonon scattering and impurity scattering are simulated which in turn allows the simulation of the carrier transport properties such as drift velocity, energy and free flight of the carriers. The impact ionisation parameters are deduced by the simulation of the ionisation rates and coefficients which is used in the simulation of mean multiplication gain and excess noise factor of AlxGa1-xN APDs by employing random ionisation path length theory. GaN has electron dominate the impact ionisation at high electric field, above 4.04 MV/cm while hole dominate at lower electric field. For Al0.3Ga0.7N and Al0.45Ga0.55N, hole dominates the impact ionisation while electron dominates the impact ionisation for Al0.7Ga0.3N. The mean multiplication gain for GaN APD has electron-initiated multiplication leading at multiplication width, w ≤ 0.2 μm while hole leads the mean multiplication gain at w ≥ 0.26 μm. Hole is leading the multiplication gain at all w for Al0.3Ga0.7N and Al0.45Ga0.55N APDs while electron leads for Al0.7Ga0.3N APDs. The excess noise factor for electron-initiated multiplication of GaN APD is lower compared to hole-initiated at w ≤ 0.2 μm but at w ≥ 0.26 μm, electron produces more excess noise than hole. Hole-initiated multiplication for Al0.3Ga0.7N and Al0.45Ga0.55N APDs have much lower excess noise compared to electron-initiated multiplication at all w while for Al0.7Ga0.3N APDs, electron-initiated multiplication produces lower noise instead. Thereafter, a comparison is made on the four simulated APDs impact ionisation coefficient, breakdown voltage and excess noise factor where it is found that Al0.45Ga0.55N is the best candidate for UV-APD due to the low hole-initiated excess noise factor with moderate breakdown voltage. 2020-10 Thesis http://shdl.mmu.edu.my/11147/ http://erep.mmu.edu.my/ masters Multimedia University Faculty of Engineering and Technology EREP ID: 9876
institution	Multimedia University
collection	MMU Institutional Repository
topic	TK5101-6720 Telecommunication Including telegraphy, telephone, radio, radar, television
spellingShingle	TK5101-6720 Telecommunication Including telegraphy, telephone, radio, radar, television Ooi, Wesley Tat Lung Optimisation of Mean Multiplication Gain and Excess Noise Factor in A1xGa1-xN Ultraviolet Avalanche Photodiodes
description	The Monte Carlo (MC) simulation on Gallium Nitride (GaN) and Aluminium Gallium Nitride (AlxGa1-xN, where x = 0.3, 0.45, 0.7) are presented. This work aims to study the AlxGa1-xN avalanche photodiodes (APDs) and optimise the AlxGa1-xN APDs. AlxGa1-xN development has been hampered by the difficulty in growing high quality AlxGa1-xN layer due to high lattice defect which necessitates the MC simulation. The scattering mechanisms such as polar optical phonon scattering, nonpolar optical phonon scattering, acoustic phonon scattering and impurity scattering are simulated which in turn allows the simulation of the carrier transport properties such as drift velocity, energy and free flight of the carriers. The impact ionisation parameters are deduced by the simulation of the ionisation rates and coefficients which is used in the simulation of mean multiplication gain and excess noise factor of AlxGa1-xN APDs by employing random ionisation path length theory. GaN has electron dominate the impact ionisation at high electric field, above 4.04 MV/cm while hole dominate at lower electric field. For Al0.3Ga0.7N and Al0.45Ga0.55N, hole dominates the impact ionisation while electron dominates the impact ionisation for Al0.7Ga0.3N. The mean multiplication gain for GaN APD has electron-initiated multiplication leading at multiplication width, w ≤ 0.2 μm while hole leads the mean multiplication gain at w ≥ 0.26 μm. Hole is leading the multiplication gain at all w for Al0.3Ga0.7N and Al0.45Ga0.55N APDs while electron leads for Al0.7Ga0.3N APDs. The excess noise factor for electron-initiated multiplication of GaN APD is lower compared to hole-initiated at w ≤ 0.2 μm but at w ≥ 0.26 μm, electron produces more excess noise than hole. Hole-initiated multiplication for Al0.3Ga0.7N and Al0.45Ga0.55N APDs have much lower excess noise compared to electron-initiated multiplication at all w while for Al0.7Ga0.3N APDs, electron-initiated multiplication produces lower noise instead. Thereafter, a comparison is made on the four simulated APDs impact ionisation coefficient, breakdown voltage and excess noise factor where it is found that Al0.45Ga0.55N is the best candidate for UV-APD due to the low hole-initiated excess noise factor with moderate breakdown voltage.
format	Thesis
qualification_level	Master's degree
author	Ooi, Wesley Tat Lung
author_facet	Ooi, Wesley Tat Lung
author_sort	Ooi, Wesley Tat Lung
title	Optimisation of Mean Multiplication Gain and Excess Noise Factor in A1xGa1-xN Ultraviolet Avalanche Photodiodes
title_short	Optimisation of Mean Multiplication Gain and Excess Noise Factor in A1xGa1-xN Ultraviolet Avalanche Photodiodes
title_full	Optimisation of Mean Multiplication Gain and Excess Noise Factor in A1xGa1-xN Ultraviolet Avalanche Photodiodes
title_fullStr	Optimisation of Mean Multiplication Gain and Excess Noise Factor in A1xGa1-xN Ultraviolet Avalanche Photodiodes
title_full_unstemmed	Optimisation of Mean Multiplication Gain and Excess Noise Factor in A1xGa1-xN Ultraviolet Avalanche Photodiodes
title_sort	optimisation of mean multiplication gain and excess noise factor in a1xga1-xn ultraviolet avalanche photodiodes
granting_institution	Multimedia University
granting_department	Faculty of Engineering and Technology
publishDate	2020
_version_	1776101397882732544

Optimisation of Mean Multiplication Gain and Excess Noise Factor in A1xGa1-xN Ultraviolet Avalanche Photodiodes

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