Optimisation of Mean Multiplication Gain and Excess Noise Factor in A1xGa1-xN Ultraviolet Avalanche Photodiodes
The Monte Carlo (MC) simulation on Gallium Nitride (GaN) and Aluminium Gallium Nitride (AlxGa1-xN, where x = 0.3, 0.45, 0.7) are presented. This work aims to study the AlxGa1-xN avalanche photodiodes (APDs) and optimise the AlxGa1-xN APDs. AlxGa1-xN development has been hampered by the difficulty in...
Saved in:
Main Author: | Ooi, Wesley Tat Lung |
---|---|
Format: | Thesis |
Published: |
2020
|
Subjects: | |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Avalanche Multiplication and Excess Noise in Thin Heterojunction AlxGa1_xAs/GaAs Avalanche Photodiodes
by: Low, Lay Chen
Published: (2010) -
Structural And Optical Studies Of Wide Band-Gap AlxGa1-xN (0 ≤ x ≤ 1) Semiconductors [TK7871.85. N577 2007 f rb].
by: Ng, Sha Shiong
Published: (2007) -
Simulation study of the transport and avalanche characteristics in SiC Avalanche Photodiodes
by: Sun, Cha Chee
Published: (2013) -
Tenaga peralihan optik perigi kuantum heterostruktur ultranipis A1x Ga1-xAs/GaAs
by: Ho, Wan Seng
Published: (1989) -
Electronic structure and excitation in Ga1-xA1xAs quantum wells /
by: Guo, Qiang
Published: (1996)