Study Of MSQ As Low-K Dielectric Material For Semiconductor Devices
High spped performance in VLSI devices requires the use of semiconductor materials such as copper interconnects and low-k dielectric. Low-k dielectric can reduce the parasitic capacitance between two metal lines, which allows higher operational speed as compared to silicon oxide.
Saved in:
| Main Author: | |
|---|---|
| Format: | Thesis |
| Published: |
2006
|
| Subjects: | |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|