Modelling Of Single Photon Avalanche Diodes
The avalanche dynamics in single photon avalanche diodes (SPADs) in the form of GaAs p+ -i-n+ diode structures was investigated theoretically using a simple random ionisation path length (RPL) MODEL. In the RPL model, the avalanche multiplication process in the i-region of a diode is modelled by gen...
Saved in:
主要作者: | |
---|---|
格式: | Thesis |
出版: |
2008
|
主題: | |
標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|