Modelling Of Single Photon Avalanche Diodes

Modelling Of Single Photon Avalanche Diodes

The avalanche dynamics in single photon avalanche diodes (SPADs) in the form of GaAs p+ -i-n+ diode structures was investigated theoretically using a simple random ionisation path length (RPL) MODEL. In the RPL model, the avalanche multiplication process in the i-region of a diode is modelled by gen...

Full description

Saved in:
Bibliographic Details
Main Author: Li, Tan Siew
Format: Thesis
Published: 2008
Subjects:
QA76.75-76.765 Computer software
Tags: Add Tag
No Tags, Be the first to tag this record!
id my-mmu-ep.321
record_format uketd_dc
spelling my-mmu-ep.3212010-05-21T08:45:21Z Modelling Of Single Photon Avalanche Diodes 2008-11 Li, Tan Siew QA76.75-76.765 Computer software The avalanche dynamics in single photon avalanche diodes (SPADs) in the form of GaAs p+ -i-n+ diode structures was investigated theoretically using a simple random ionisation path length (RPL) MODEL. In the RPL model, the avalanche multiplication process in the i-region of a diode is modelled by generating random carrier trajectories, which may result in impact ionisation as described by an exponentially decaying probability distribution function (PDF) of the ionisation path length following a hard-threshold dead space. 2008-11 Thesis http://shdl.mmu.edu.my/321/ http://vlib.mmu.edu.my/diglib/login/dlusr/login.php masters Multimedia University Research Library
institution Multimedia University
collection MMU Institutional Repository
topic QA76.75-76.765 Computer software
spellingShingle QA76.75-76.765 Computer software
Li, Tan Siew
Modelling Of Single Photon Avalanche Diodes
description The avalanche dynamics in single photon avalanche diodes (SPADs) in the form of GaAs p+ -i-n+ diode structures was investigated theoretically using a simple random ionisation path length (RPL) MODEL. In the RPL model, the avalanche multiplication process in the i-region of a diode is modelled by generating random carrier trajectories, which may result in impact ionisation as described by an exponentially decaying probability distribution function (PDF) of the ionisation path length following a hard-threshold dead space.
format Thesis
qualification_level Master's degree
author Li, Tan Siew
author_facet Li, Tan Siew
author_sort Li, Tan Siew
title Modelling Of Single Photon Avalanche Diodes
title_short Modelling Of Single Photon Avalanche Diodes
title_full Modelling Of Single Photon Avalanche Diodes
title_fullStr Modelling Of Single Photon Avalanche Diodes
title_full_unstemmed Modelling Of Single Photon Avalanche Diodes
title_sort modelling of single photon avalanche diodes
granting_institution Multimedia University
granting_department Research Library
publishDate 2008
_version_ 1747829106037227520

Similar Items