Simulation study of the transport and avalanche characteristics in SiC Avalanche Photodiodes
The Monte Carlo (MC) simulation of electron and hole transport properties in 4H- and 6H-SiC for a wide electric field region are presented. This MC model includes two non-parabolic conduction bands and two non-parabolic valence bands. Based on the material parameters, the electron and hole scatterin...
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| Format: | Thesis |
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2013
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