Simulation study of the transport and avalanche characteristics in SiC Avalanche Photodiodes

Simulation study of the transport and avalanche characteristics in SiC Avalanche Photodiodes

The Monte Carlo (MC) simulation of electron and hole transport properties in 4H- and 6H-SiC for a wide electric field region are presented. This MC model includes two non-parabolic conduction bands and two non-parabolic valence bands. Based on the material parameters, the electron and hole scatterin...

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Main Author: Sun, Cha Chee
Format: Thesis
Published: 2013
Subjects:
TK Electrical engineering
Electronics Nuclear engineering
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spelling my-mmu-ep.59002014-12-29T05:38:25Z Simulation study of the transport and avalanche characteristics in SiC Avalanche Photodiodes 2013-06 Sun, Cha Chee TK Electrical engineering. Electronics Nuclear engineering The Monte Carlo (MC) simulation of electron and hole transport properties in 4H- and 6H-SiC for a wide electric field region are presented. This MC model includes two non-parabolic conduction bands and two non-parabolic valence bands. Based on the material parameters, the electron and hole scattering rates, including polar optical phonon scattering, optical phonon scattering and acoustic phonon scattering are evaluated. The electron and hole drift velocity, energy and free flight time are simulated as a function of applied electric field ranging from 10 kV/cm to 1 MV/cm in room temperature (27 °C) at an impurity concentration of 1×10 18 cm-3. The simulated electron and hole drift velocity with electric field dependency for both materials are in good agreement with experimental results from other researchers found in literature. A complete set of energy band and phonon scattering parameters for electron and hole for both materials are deduced. 2013-06 Thesis http://shdl.mmu.edu.my/5900/ http://library.mmu.edu.my/diglib/onlinedb/dig_lib.php masters Multimedia University Faculty of Engineering and Technology
institution Multimedia University
collection MMU Institutional Repository
topic TK Electrical engineering
Electronics Nuclear engineering
spellingShingle TK Electrical engineering
Electronics Nuclear engineering
Sun, Cha Chee
Simulation study of the transport and avalanche characteristics in SiC Avalanche Photodiodes
description The Monte Carlo (MC) simulation of electron and hole transport properties in 4H- and 6H-SiC for a wide electric field region are presented. This MC model includes two non-parabolic conduction bands and two non-parabolic valence bands. Based on the material parameters, the electron and hole scattering rates, including polar optical phonon scattering, optical phonon scattering and acoustic phonon scattering are evaluated. The electron and hole drift velocity, energy and free flight time are simulated as a function of applied electric field ranging from 10 kV/cm to 1 MV/cm in room temperature (27 °C) at an impurity concentration of 1×10 18 cm-3. The simulated electron and hole drift velocity with electric field dependency for both materials are in good agreement with experimental results from other researchers found in literature. A complete set of energy band and phonon scattering parameters for electron and hole for both materials are deduced.
format Thesis
qualification_level Master's degree
author Sun, Cha Chee
author_facet Sun, Cha Chee
author_sort Sun, Cha Chee
title Simulation study of the transport and avalanche characteristics in SiC Avalanche Photodiodes
title_short Simulation study of the transport and avalanche characteristics in SiC Avalanche Photodiodes
title_full Simulation study of the transport and avalanche characteristics in SiC Avalanche Photodiodes
title_fullStr Simulation study of the transport and avalanche characteristics in SiC Avalanche Photodiodes
title_full_unstemmed Simulation study of the transport and avalanche characteristics in SiC Avalanche Photodiodes
title_sort simulation study of the transport and avalanche characteristics in sic avalanche photodiodes
granting_institution Multimedia University
granting_department Faculty of Engineering and Technology
publishDate 2013
_version_ 1747829599188811776

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