Theoretical Analysis Of Double Heterojunction Bipolar Transistors With Composite Collectors.

A theoretical investigation of the DC current-voltage (I-V) characteristics and avalanche multiplication in GaInP/GaAs composite collector double heterojunction bipolar transistor (DHBTs) was performed using a physical one-dimensional analytical model developed based on the Ebers-Moll methodology....

Full description

Saved in:
Bibliographic Details
Main Author: Goh , Yu Ling
Format: Thesis
Published: 2003
Subjects:
Tags: Add Tag
No Tags, Be the first to tag this record!