Theoretical Analysis Of Double Heterojunction Bipolar Transistors With Composite Collectors.
A theoretical investigation of the DC current-voltage (I-V) characteristics and avalanche multiplication in GaInP/GaAs composite collector double heterojunction bipolar transistor (DHBTs) was performed using a physical one-dimensional analytical model developed based on the Ebers-Moll methodology....
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Format: | Thesis |
Published: |
2003
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Summary: | A theoretical investigation of the DC current-voltage (I-V) characteristics and avalanche multiplication in GaInP/GaAs composite collector double heterojunction bipolar transistor (DHBTs) was performed using a physical one-dimensional analytical model developed based on the Ebers-Moll methodology. The concept of carrier transmission, reclection and tunneling at the potential barrier at the heterojunction was expounded in the analytical model. |
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