Implementation of memristor using 0.13^m technology in NAND & NOR for hybrid CMOS integrated / Nurfadzilah Fathin Sharin

This thesis describes the the use of nanoelectronic device known as memristor as an alternative device structure to CMOS in forming digital logic gates. The purpose of this research project is to develop a new model parameter based on actual measured data with all parameter described from the fabric...

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Bibliographic Details
Main Author: Sharin, Nurfadzilah Fathin
Format: Thesis
Language:English
Published: 2014
Subjects:
Online Access:https://ir.uitm.edu.my/id/eprint/102749/1/102749.pdf
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