Investigation of shallow trench isolation and silicide effect on 90nm CMOS devices / Abu Hudzaifah Baharom

Investigation of shallow trench isolation and silicide effect on 90nm CMOS devices / Abu Hudzaifah Baharom

Strained technology is used to enhance the performance of the CMOS that involves physically stretching or compressing the silicon crystal lattice, which in turn increasing carrier mobility without having to make them smaller. Shallow-trench isolation (STI) and silicidation process is the way of stra...

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書目詳細資料
主要作者:	Baharom, Abu Hudzaifah
格式:	Thesis
語言:	English
出版:	2010
在線閱讀:	https://ir.uitm.edu.my/id/eprint/102995/1/102995.pdf
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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