Optimization of dc and rf performances using multiple-gated high electron mobility transistor (HEMT) / Mohd Nizam Osman
This study carried out a detail analysis of the perform anc e of HEMT device with various numb ers of gate finger s with respect to their DC and RF performances. The dev ices were fabrica ted by a Plessey found ry which adapted a HEMT process with 0.2 um GaAs technology. A few stages were tak en...
Saved in:
主要作者: | |
---|---|
格式: | Thesis |
語言: | English |
出版: |
2009
|
主題: | |
在線閱讀: | https://ir.uitm.edu.my/id/eprint/27375/1/TM_MOHD%20NIZAM%20OSMAN%20EE%2009_5.pdf |
標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|