Optimization of dc and rf performances using multiple-gated high electron mobility transistor (HEMT) / Mohd Nizam Osman
This study carried out a detail analysis of the perform anc e of HEMT device with various numb ers of gate finger s with respect to their DC and RF performances. The dev ices were fabrica ted by a Plessey found ry which adapted a HEMT process with 0.2 um GaAs technology. A few stages were tak en...
Saved in:
| Main Author: | |
|---|---|
| Format: | Thesis |
| Language: | English |
| Published: |
2009
|
| Subjects: | |
| Online Access: | https://ir.uitm.edu.my/id/eprint/27375/1/TM_MOHD%20NIZAM%20OSMAN%20EE%2009_5.pdf |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|