Characterization of high electron mobility transistor (HEMT) / Mohd Nazli Mohd Nushi
In this project, we shall attempt to reproduce simultaneously the DC and RF characteristics of the HEMT using a unique set of physical device parameters. The technology that used in this project is equal to 0.5 urn In this report, a DC models for HEMT's will be represented. This included the Id...
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| Format: | Thesis |
| Language: | English |
| Published: |
2008
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| Subjects: | |
| Online Access: | https://ir.uitm.edu.my/id/eprint/98599/1/98599.pdf |
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