Modelling and switching simulation of gate turn-off thyristor using finite element method

Modelling and switching simulation of gate turn-off thyristor using finite element method

The gate turn-off (GTO) thyristor has the best voltage blocking and current conducting capabilities among all known high power semiconductor switching devices. The switching characteristics of a GTO thyristor are influenced by doping profile, material properties, lifetime and mobility of holes an...

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书目详细资料
主要作者:	Norainon, Mohamed
格式:	Thesis
语言:	English
出版:	2010
主题:	TK Electrical engineering Electronics Nuclear engineering
在线阅读:	http://umpir.ump.edu.my/id/eprint/2187/1/NORAINON_MOHAMED.PDF
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