Sol-gel BST thin films for FeFET applications : fabrication and characterization
The effect of the chemical composition and film thickness of the ferroelectric barium strontium titanate (BST) at the memory window behavior of Al/BST/SiO2/Si-Gatefield effect transistor structure has been investigated. BaxSr1-xTiO3 thin films with different x values and film thickness have been f...
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| 格式: | Thesis |
| 语言: | English |
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| 在线阅读: | http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/31170/1/Page%201-24.pdf http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/31170/2/Full%20text.pdf |
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