Fabrication and chracterization of single and multilayer tunnel dielectrics for advanced floating gate flash memory
The floating gate device has been the workhorse for the non-volatile memory technology since the beginning of flash memory era. However, as the device is scaled down towards the realms of nanometer dimension, floating gate flash faces a very steep scaling path. The tunnel oxide scaling has a practic...
محفوظ في:
المؤلف الرئيسي: | |
---|---|
التنسيق: | أطروحة |
اللغة: | English |
الموضوعات: | |
الوصول للمادة أونلاين: | http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/44368/1/P.1-24.pdf http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/44368/2/Full%20Text.pdf |
الوسوم: |
إضافة وسم
لا توجد وسوم, كن أول من يضع وسما على هذه التسجيلة!
|