Fabrication and chracterization of single and multilayer tunnel dielectrics for advanced floating gate flash memory
The floating gate device has been the workhorse for the non-volatile memory technology since the beginning of flash memory era. However, as the device is scaled down towards the realms of nanometer dimension, floating gate flash faces a very steep scaling path. The tunnel oxide scaling has a practic...
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| 格式: | Thesis |
| 語言: | English |
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| 在線閱讀: | http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/44368/1/P.1-24.pdf http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/44368/2/Full%20Text.pdf |
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