Fabrication and characterization of ultra thin Si0₂ for nano devices: surface morphology and electrical study
The aim of this research is to fabricate and characterize (optical and electrical) an ultra thin silicon dioxide for sub nano devices. In this research, dry oxidation method using high temperature furnace is chosen to fabricate a thin layer of oxide below 30Angstroms. There are three level of tempe...
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| 格式: | Thesis |
| 語言: | English |
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| 在線閱讀: | http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/63455/1/Page%201-24.pdf http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/63455/2/Full%20text.pdf |
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