Optimization of P-I-N rectifier diode for yield and robustness improvement using DOE

The Power Rectifier (P-i-N rectifier) is one of the widely used diode in high power semiconductor devices as circuit protection. This popularity comes from excellent reverse voltage blocking and fast switching time. As a result, the exploration on the power rectifiers to make the device more robust...

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Format:	Thesis
Language:	English
Subjects:	Power rectifier Power Rectifier (P-i-N rectifier) Diode
Online Access:	http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/78205/1/Page%201-24.pdf http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/78205/2/Full%20text.pdf http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/78205/4/Cheah%20Chai%20Mee.pdf
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record_format	uketd_dc
spelling	my-unimap-782052023-03-23T04:03:39Z Optimization of P-I-N rectifier diode for yield and robustness improvement using DOE Mohd Khairuddin, Md. Arshad, Ir. Dr. The Power Rectifier (P-i-N rectifier) is one of the widely used diode in high power semiconductor devices as circuit protection. This popularity comes from excellent reverse voltage blocking and fast switching time. As a result, the exploration on the power rectifiers to make the device more robust and competitive in the market is boundless, which aims for continuous improvement on the electrical characteristics. In general, the P-i-N rectifier is consists of a highly-doped P-N junction with a low doped intrinsic region sandwiched in between the regions. Such characteristics have made the design of as high as 1000 V reverse voltage diode is possible by lowering the switching time. This thesis describes the research work done on the power rectifier by exploring the device characteristics and optimizing the input responses using Design of Experiment (DOE) techinique. Parameter such as epitaxial layer specification, junction drive time and also other internal fabrication processes were optimized, to produce a desired device robustness and yield improvement. The main electrical characteristics namely reverse recovery lifetime, reverse voltage, reverse leakage current and such, were investigated and analyzed. The results show that with implementation of optimized epitaxial thickness and resistivity, the P-i-N power diodes were able to withstand high reverse voltage. The optimum epitaxial thickness for 600 V device is at 96 μm. The epitaxial thickness is a dominant factor as compared to epitaxial resistivity and boron diffusion time. Next, the variation in junction drive time shows a direct relationship between the junction depth of the P-i-N rectifier to the reverse voltage for 200 V device. Each additional 60 minutes in boron diffusion time will increase the device reverse voltage by 30 V. Lastly, the investigations are about reverse recovery lifetime and forward voltage of the power diode. Universiti Malaysia Perlis (UniMAP) Thesis en http://dspace.unimap.edu.my:80/xmlui/handle/123456789/78205 http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/78205/3/license.txt 8a4605be74aa9ea9d79846c1fba20a33 http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/78205/1/Page%201-24.pdf ea4395af9ffcbdce42628e46bb19d2fa http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/78205/2/Full%20text.pdf ec6e6a7b22539330f79336f0a7d19dd5 http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/78205/4/Cheah%20Chai%20Mee.pdf f9e6069496bd2b170b962b5502ef0fe1 Universiti Malaysia Perlis (UniMAP) Power rectifier Power Rectifier (P-i-N rectifier) Diode Institute of Nano Electronic Engineering
institution	Universiti Malaysia Perlis
collection	UniMAP Institutional Repository
language	English
advisor	Mohd Khairuddin, Md. Arshad, Ir. Dr.
topic	Power rectifier Power Rectifier (P-i-N rectifier) Diode
spellingShingle	Power rectifier Power Rectifier (P-i-N rectifier) Diode Optimization of P-I-N rectifier diode for yield and robustness improvement using DOE
description	The Power Rectifier (P-i-N rectifier) is one of the widely used diode in high power semiconductor devices as circuit protection. This popularity comes from excellent reverse voltage blocking and fast switching time. As a result, the exploration on the power rectifiers to make the device more robust and competitive in the market is boundless, which aims for continuous improvement on the electrical characteristics. In general, the P-i-N rectifier is consists of a highly-doped P-N junction with a low doped intrinsic region sandwiched in between the regions. Such characteristics have made the design of as high as 1000 V reverse voltage diode is possible by lowering the switching time. This thesis describes the research work done on the power rectifier by exploring the device characteristics and optimizing the input responses using Design of Experiment (DOE) techinique. Parameter such as epitaxial layer specification, junction drive time and also other internal fabrication processes were optimized, to produce a desired device robustness and yield improvement. The main electrical characteristics namely reverse recovery lifetime, reverse voltage, reverse leakage current and such, were investigated and analyzed. The results show that with implementation of optimized epitaxial thickness and resistivity, the P-i-N power diodes were able to withstand high reverse voltage. The optimum epitaxial thickness for 600 V device is at 96 μm. The epitaxial thickness is a dominant factor as compared to epitaxial resistivity and boron diffusion time. Next, the variation in junction drive time shows a direct relationship between the junction depth of the P-i-N rectifier to the reverse voltage for 200 V device. Each additional 60 minutes in boron diffusion time will increase the device reverse voltage by 30 V. Lastly, the investigations are about reverse recovery lifetime and forward voltage of the power diode.
format	Thesis
title	Optimization of P-I-N rectifier diode for yield and robustness improvement using DOE
title_short	Optimization of P-I-N rectifier diode for yield and robustness improvement using DOE
title_full	Optimization of P-I-N rectifier diode for yield and robustness improvement using DOE
title_fullStr	Optimization of P-I-N rectifier diode for yield and robustness improvement using DOE
title_full_unstemmed	Optimization of P-I-N rectifier diode for yield and robustness improvement using DOE
title_sort	optimization of p-i-n rectifier diode for yield and robustness improvement using doe
granting_institution	Universiti Malaysia Perlis (UniMAP)
granting_department	Institute of Nano Electronic Engineering
url	http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/78205/1/Page%201-24.pdf http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/78205/2/Full%20text.pdf http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/78205/4/Cheah%20Chai%20Mee.pdf
_version_	1776104241403789312

Optimization of P-I-N rectifier diode for yield and robustness improvement using DOE

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