Failure Analysis Investigation on 2N7002LTI TMOS Device Due to Electrostatic Discharge (ESD) Failures
The common failures in the electronic devices e.g. Metal Oxide Semiconductor(MOS), and T type Metal Oxide Semiconductor Field Effect Transistor (TMOS) are due to Electrostatic Discharge(ESD) and Electrical Overseers(EOS). A review is carried out giving an account of various types of failures and f...
Saved in:
| Main Author: | |
|---|---|
| Format: | Thesis |
| Language: | English English |
| Published: |
1998
|
| Subjects: | |
| Online Access: | http://psasir.upm.edu.my/id/eprint/10121/1/FK_1998_5_A.pdf |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|