Failure Analysis Investigation on 2N7002LTI TMOS Device Due to Electrostatic Discharge (ESD) Failures

The common failures in the electronic devices e.g. Metal Oxide Semiconductor(MOS), and T type Metal Oxide Semiconductor Field Effect Transistor (TMOS) are due to Electrostatic Discharge(ESD) and Electrical Overseers(EOS). A review is carried out giving an account of various types of failures and f...

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Bibliographic Details
Main Author:	Abdul Manaf, Abdul Halim
Format:	Thesis
Language:	English English
Published:	1998
Subjects:	Semiconductors - Failures - Case studies
Online Access:	http://psasir.upm.edu.my/id/eprint/10121/1/FK_1998_5_A.pdf
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id	my-upm-ir.10121
record_format	uketd_dc
spelling	my-upm-ir.101212011-03-10T00:53:00Z Failure Analysis Investigation on 2N7002LTI TMOS Device Due to Electrostatic Discharge (ESD) Failures 1998-04 Abdul Manaf, Abdul Halim The common failures in the electronic devices e.g. Metal Oxide Semiconductor(MOS), and T type Metal Oxide Semiconductor Field Effect Transistor (TMOS) are due to Electrostatic Discharge(ESD) and Electrical Overseers(EOS). A review is carried out giving an account of various types of failures and failure analysis philosophies. investigation. methodology developed here, Seremban, between Gate to Source(BVGSS) Stress Test, Parametric Abnormality Test (PA T) to induce failure. It h as been observed that the 2N7002LTl lMOS device does not fail within 45 volts of positively as well as negatively biased voltage condition when applied to the gate and source of the device, during BVGSS Stress Test. On the other hand the Voltage Susceptibility Test has given a limiting voltage of 110 volts, for the device to fail. The failure of the devices have been studied using the failure analysis philosophy developed here and it is observed that the failure is due to thinning of the gate oxide layer. The detailed scanning electron microscope (SEM) study has been carried out to comment on the additional mechanics of failure. The amount thinning of the gate oxide layer in the various regions of the device has been found to be in the range of 800 to 950 Angstroms. Semiconductors - Failures - Case studies 1998-04 Thesis http://psasir.upm.edu.my/id/eprint/10121/ http://psasir.upm.edu.my/id/eprint/10121/1/FK_1998_5_A.pdf application/pdf en public masters Universiti Putra Malaysia Semiconductors - Failures - Case studies Faculty of Engineering English
institution	Universiti Putra Malaysia
collection	PSAS Institutional Repository
language	English English
topic	Semiconductors - Failures - Case studies
spellingShingle	Semiconductors - Failures - Case studies Abdul Manaf, Abdul Halim Failure Analysis Investigation on 2N7002LTI TMOS Device Due to Electrostatic Discharge (ESD) Failures
description	The common failures in the electronic devices e.g. Metal Oxide Semiconductor(MOS), and T type Metal Oxide Semiconductor Field Effect Transistor (TMOS) are due to Electrostatic Discharge(ESD) and Electrical Overseers(EOS). A review is carried out giving an account of various types of failures and failure analysis philosophies. investigation. methodology developed here, Seremban, between Gate to Source(BVGSS) Stress Test, Parametric Abnormality Test (PA T) to induce failure. It h as been observed that the 2N7002LTl lMOS device does not fail within 45 volts of positively as well as negatively biased voltage condition when applied to the gate and source of the device, during BVGSS Stress Test. On the other hand the Voltage Susceptibility Test has given a limiting voltage of 110 volts, for the device to fail. The failure of the devices have been studied using the failure analysis philosophy developed here and it is observed that the failure is due to thinning of the gate oxide layer. The detailed scanning electron microscope (SEM) study has been carried out to comment on the additional mechanics of failure. The amount thinning of the gate oxide layer in the various regions of the device has been found to be in the range of 800 to 950 Angstroms.
format	Thesis
qualification_level	Master's degree
author	Abdul Manaf, Abdul Halim
author_facet	Abdul Manaf, Abdul Halim
author_sort	Abdul Manaf, Abdul Halim
title	Failure Analysis Investigation on 2N7002LTI TMOS Device Due to Electrostatic Discharge (ESD) Failures
title_short	Failure Analysis Investigation on 2N7002LTI TMOS Device Due to Electrostatic Discharge (ESD) Failures
title_full	Failure Analysis Investigation on 2N7002LTI TMOS Device Due to Electrostatic Discharge (ESD) Failures
title_fullStr	Failure Analysis Investigation on 2N7002LTI TMOS Device Due to Electrostatic Discharge (ESD) Failures
title_full_unstemmed	Failure Analysis Investigation on 2N7002LTI TMOS Device Due to Electrostatic Discharge (ESD) Failures
title_sort	failure analysis investigation on 2n7002lti tmos device due to electrostatic discharge (esd) failures
granting_institution	Universiti Putra Malaysia
granting_department	Faculty of Engineering
publishDate	1998
url	http://psasir.upm.edu.my/id/eprint/10121/1/FK_1998_5_A.pdf
_version_	1747811051956600832

Failure Analysis Investigation on 2N7002LTI TMOS Device Due to Electrostatic Discharge (ESD) Failures

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