Failure Analysis Investigation on 2N7002LTI TMOS Device Due to Electrostatic Discharge (ESD) Failures

Failure Analysis Investigation on 2N7002LTI TMOS Device Due to Electrostatic Discharge (ESD) Failures

The common failures in the electronic devices e.g. Metal Oxide Semiconductor(MOS), and T type Metal Oxide Semiconductor Field Effect Transistor (TMOS) are due to Electrostatic Discharge(ESD) and Electrical Overseers(EOS). A review is carried out giving an account of various types of failures and f...

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书目详细资料
主要作者:	Abdul Manaf, Abdul Halim
格式:	Thesis
语言:	English English
出版:	1998
主题:	Semiconductors - Failures - Case studies
在线阅读:	http://psasir.upm.edu.my/id/eprint/10121/1/FK_1998_5_A.pdf
标签:	添加标签没有标签, 成为第一个标记此记录!

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