Failure Analysis Investigation on 2N7002LTI TMOS Device Due to Electrostatic Discharge (ESD) Failures
The common failures in the electronic devices e.g. Metal Oxide Semiconductor(MOS), and T type Metal Oxide Semiconductor Field Effect Transistor (TMOS) are due to Electrostatic Discharge(ESD) and Electrical Overseers(EOS). A review is carried out giving an account of various types of failures and f...
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| 格式: | Thesis |
| 语言: | English English |
| 出版: |
1998
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| 主题: | |
| 在线阅读: | http://psasir.upm.edu.my/id/eprint/10121/1/FK_1998_5_A.pdf |
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