Al-Ta2O5-GaN
Semiconductor Device Structure

Al-Ta2O5-GaN Semiconductor Device Structure

GaN-based semiconductor devices have been extensively investigated for used in high power and high temperature device applications in order to replace Si which is no longer capable to fulfill these ever-increasing demands. The characteristics of low leakage current, low oxide charge density, and...

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書目詳細資料
主要作者:	Yeoh, Lai Seng
格式:	Thesis
語言:	English
出版:	2014
主題:	QC1 Physics (General)
在線閱讀:	http://eprints.usm.my/28959/1/Al-Ta2O5-GaN_SEMICONDUCTOR_DEVICE_SRTUCTURE.pdf
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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