Carbon Doped Silicon Dioxide Low K Dielectric Material.[QC585.75.S55 L732 2004 f rb][Microfiche 7649]

Objektif kajian ini adalah untuk mengkaji keberkesanan mendopkan sebatian karbon keatas SiO2 untuk menghasilkan bahan dielektrik k rendah. The semiconductor industry is entering a new millennium where scientists and engineers are continuing to search for the ideal dielectric material for future c...

وصف كامل

محفوظ في:

التفاصيل البيبلوغرافية
المؤلف الرئيسي:	Lim, Alex Ying Kiat
التنسيق:	أطروحة
اللغة:	English
منشور في:	2004
الموضوعات:	QC501-766 Electricity and magnetism
الوصول للمادة أونلاين:	http://eprints.usm.my/3087/1/QC585.75.S55_L732_2004_f_rb-Carbon_doped_silicon_dioxide_low_K_dielectric_material-_by_Alex_Lim_Ying_Kiat-Fizik-Microfiche_7649.pdf
الوسوم:	إضافة وسم لا توجد وسوم, كن أول من يضع وسما على هذه التسجيلة!

id	my-usm-ep.3087
record_format	uketd_dc
spelling	my-usm-ep.30872017-03-22T02:23:56Z Carbon Doped Silicon Dioxide Low K Dielectric Material.[QC585.75.S55 L732 2004 f rb][Microfiche 7649] 2004-03 Lim, Alex Ying Kiat QC501-766 Electricity and magnetism Objektif kajian ini adalah untuk mengkaji keberkesanan mendopkan sebatian karbon keatas SiO2 untuk menghasilkan bahan dielektrik k rendah. The semiconductor industry is entering a new millennium where scientists and engineers are continuing to search for the ideal dielectric material for future chip fabrication. 2004-03 Thesis http://eprints.usm.my/3087/ http://eprints.usm.my/3087/1/QC585.75.S55_L732_2004_f_rb-Carbon_doped_silicon_dioxide_low_K_dielectric_material-_by_Alex_Lim_Ying_Kiat-Fizik-Microfiche_7649.pdf application/pdf en public masters Universiti Sains Malaysia Pusat Pengajian Sains Fizik
institution	Universiti Sains Malaysia
collection	USM Institutional Repository
language	English
topic	QC501-766 Electricity and magnetism
spellingShingle	QC501-766 Electricity and magnetism Lim, Alex Ying Kiat Carbon Doped Silicon Dioxide Low K Dielectric Material.[QC585.75.S55 L732 2004 f rb][Microfiche 7649]
description	Objektif kajian ini adalah untuk mengkaji keberkesanan mendopkan sebatian karbon keatas SiO2 untuk menghasilkan bahan dielektrik k rendah. The semiconductor industry is entering a new millennium where scientists and engineers are continuing to search for the ideal dielectric material for future chip fabrication.
format	Thesis
qualification_level	Master's degree
author	Lim, Alex Ying Kiat
author_facet	Lim, Alex Ying Kiat
author_sort	Lim, Alex Ying Kiat
title	Carbon Doped Silicon Dioxide Low K Dielectric Material.[QC585.75.S55 L732 2004 f rb][Microfiche 7649]
title_short	Carbon Doped Silicon Dioxide Low K Dielectric Material.[QC585.75.S55 L732 2004 f rb][Microfiche 7649]
title_full	Carbon Doped Silicon Dioxide Low K Dielectric Material.[QC585.75.S55 L732 2004 f rb][Microfiche 7649]
title_fullStr	Carbon Doped Silicon Dioxide Low K Dielectric Material.[QC585.75.S55 L732 2004 f rb][Microfiche 7649]
title_full_unstemmed	Carbon Doped Silicon Dioxide Low K Dielectric Material.[QC585.75.S55 L732 2004 f rb][Microfiche 7649]
title_sort	carbon doped silicon dioxide low k dielectric material.[qc585.75.s55 l732 2004 f rb][microfiche 7649]
granting_institution	Universiti Sains Malaysia
granting_department	Pusat Pengajian Sains Fizik
publishDate	2004
url	http://eprints.usm.my/3087/1/QC585.75.S55_L732_2004_f_rb-Carbon_doped_silicon_dioxide_low_K_dielectric_material-_by_Alex_Lim_Ying_Kiat-Fizik-Microfiche_7649.pdf
_version_	1747819664254173184

Carbon Doped Silicon Dioxide Low K Dielectric Material.[QC585.75.S55 L732 2004 f rb][Microfiche 7649]

مواد مشابهة