Growth And Characterization Of Gallium Nitride Films On Porous Silicon Substrate

Growth And Characterization Of Gallium Nitride Films On Porous Silicon Substrate

Kajian ini memfokuskan penumbuhan lapisan gallium nitrida (GaN) ke atas substrat silikon (Si) berliang melalui kaedah percikan frekuensi radio (RF sputtering) dan penyejat alur elektron (e-beam evaporator). Untuk perbandingan, lapisan penampan nitrida aluminium nitrida (AlN), lapisan penampan titani...

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書目詳細資料
主要作者:	Samsudin, Muhammad Esmed Alif
格式:	Thesis
語言:	English
出版:	2016
主題:	QC1 Physics (General)
在線閱讀:	http://eprints.usm.my/31756/1/MUHAMMAD_ESMED_ALIF_BIN_SAMSUDIN_24%28NN%29.pdf
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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