A1GaN Thin Films On Silicon Substrates For Photodetector And Transistor Devices
This study examined AlxGa1-xN alloys grown on Si substrate for UVphotodetectors and transistors applications. Radio-frequency (RF) nitrogen plasmaassisted molecular beam epitaxy (PA-MBE) technique was used to grow AlxGaxN/GaN/AlN thin films on the Si(111) substrates. Undoped and n-type Si-doped samp...
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| 主要作者: | |
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| 格式: | Thesis |
| 語言: | English |
| 出版: |
2011
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| 主題: | |
| 在線閱讀: | http://eprints.usm.my/41621/1/ASAAD_SHAKIR_HUSSEIN.pdf |
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| 總結: | This study examined AlxGa1-xN alloys grown on Si substrate for UVphotodetectors and transistors applications. Radio-frequency (RF) nitrogen plasmaassisted molecular beam epitaxy (PA-MBE) technique was used to grow AlxGaxN/GaN/AlN thin films on the Si(111) substrates. Undoped and n-type Si-doped samples of AlxGa1-xN with different Al-mole fractions were successfully grown.
Reflection high energy electron diffraction (RHEED), scanning electron microscopy (SEM), transmission electron microscopy (TEM), atomic force microscopy (AFM), high-resolution X-ray diffraction (HR-XRD), photoluminescence (PL), |
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