Development Of Spacer Free Self-Aligned Contact Implantation For Power Devices

Mengoptimasi skema proses integrasi bagi sesebuah teknolgi merupakan salah satu faktor penting untuk mengurangkan bilangan kecatatan dan kitaran masa dalam bidang fabrikasi wafer. Dalam pengajian sarjana ini, aliran proses yang dioptimasi bagi menjajarkan penimpalan kontak telah dikaji bagi teknolog...

Full description

Saved in:

Bibliographic Details
Main Author:	Poobalan, Banu
Format:	Thesis
Language:	English
Published:	2009
Subjects:	TN1-997 Mining engineering Metallurgy
Online Access:	http://eprints.usm.my/41784/1/Banu_AP_Poobalan24.pdf
Tags:	Add Tag No Tags, Be the first to tag this record!

id	my-usm-ep.41784
record_format	uketd_dc
spelling	my-usm-ep.417842019-04-12T05:27:00Z Development Of Spacer Free Self-Aligned Contact Implantation For Power Devices 2009-11 Poobalan, Banu TN1-997 Mining engineering. Metallurgy Mengoptimasi skema proses integrasi bagi sesebuah teknolgi merupakan salah satu faktor penting untuk mengurangkan bilangan kecatatan dan kitaran masa dalam bidang fabrikasi wafer. Dalam pengajian sarjana ini, aliran proses yang dioptimasi bagi menjajarkan penimpalan kontak telah dikaji bagi teknologi Infineoen CoolMOS. Selepas mengaji 3 idea yang berlainan dengan insentif, konsep yang paling berpotensi tinggi dipilih bagi pengoptimasian dan pencirian lanjutan di peringkat wafer dan poduk. Optimization of the process integration scheme for a technology is one of the key factors within wafer fabrication in order to reduce defect density and production cycle time. Within this master study, an optimized process flow for the self-aligned contact implantation was evaluated for the Infineons CoolMOS technology. After intensive feasibility investigations of 3 different ideas, the most promising concept was further optimized and characterized on wafer level as well as in the final product. 2009-11 Thesis http://eprints.usm.my/41784/ http://eprints.usm.my/41784/1/Banu_AP_Poobalan24.pdf application/pdf en public masters Universiti Sains Malaysia Pusat Pengajian Kejuruteraan Bahan & Sumber Mineral
institution	Universiti Sains Malaysia
collection	USM Institutional Repository
language	English
topic	TN1-997 Mining engineering Metallurgy
spellingShingle	TN1-997 Mining engineering Metallurgy Poobalan, Banu Development Of Spacer Free Self-Aligned Contact Implantation For Power Devices
description	Mengoptimasi skema proses integrasi bagi sesebuah teknolgi merupakan salah satu faktor penting untuk mengurangkan bilangan kecatatan dan kitaran masa dalam bidang fabrikasi wafer. Dalam pengajian sarjana ini, aliran proses yang dioptimasi bagi menjajarkan penimpalan kontak telah dikaji bagi teknologi Infineoen CoolMOS. Selepas mengaji 3 idea yang berlainan dengan insentif, konsep yang paling berpotensi tinggi dipilih bagi pengoptimasian dan pencirian lanjutan di peringkat wafer dan poduk. Optimization of the process integration scheme for a technology is one of the key factors within wafer fabrication in order to reduce defect density and production cycle time. Within this master study, an optimized process flow for the self-aligned contact implantation was evaluated for the Infineons CoolMOS technology. After intensive feasibility investigations of 3 different ideas, the most promising concept was further optimized and characterized on wafer level as well as in the final product.
format	Thesis
qualification_level	Master's degree
author	Poobalan, Banu
author_facet	Poobalan, Banu
author_sort	Poobalan, Banu
title	Development Of Spacer Free Self-Aligned Contact Implantation For Power Devices
title_short	Development Of Spacer Free Self-Aligned Contact Implantation For Power Devices
title_full	Development Of Spacer Free Self-Aligned Contact Implantation For Power Devices
title_fullStr	Development Of Spacer Free Self-Aligned Contact Implantation For Power Devices
title_full_unstemmed	Development Of Spacer Free Self-Aligned Contact Implantation For Power Devices
title_sort	development of spacer free self-aligned contact implantation for power devices
granting_institution	Universiti Sains Malaysia
granting_department	Pusat Pengajian Kejuruteraan Bahan & Sumber Mineral
publishDate	2009
url	http://eprints.usm.my/41784/1/Banu_AP_Poobalan24.pdf
_version_	1747820969590784000

Development Of Spacer Free Self-Aligned Contact Implantation For Power Devices

Similar Items