Simulation And Fabrication Of Ge Islands On Si Metal-Semiconductor-Metal Photodetectors
In this thesis, experimental fabrication and theoretical simulation of Ge islands Si based metal-semiconductor-metal photodetectors have been reported. Radio frequency sputtering was used to deposit Ge thin films on silicon substrates. This is followed by rapid thermal annealing to form Ge islands....
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2010
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my-usm-ep.418222019-04-12T05:26:46Z Simulation And Fabrication Of Ge Islands On Si Metal-Semiconductor-Metal Photodetectors 2010-11 Sarmast, Hadi Mahmodi Sheikh QC1 Physics (General) In this thesis, experimental fabrication and theoretical simulation of Ge islands Si based metal-semiconductor-metal photodetectors have been reported. Radio frequency sputtering was used to deposit Ge thin films on silicon substrates. This is followed by rapid thermal annealing to form Ge islands. Not only that the annealing produces Ge islands but also wetting layer. The size and density of the islands are greatly influenced by the annealing time. 2010-11 Thesis http://eprints.usm.my/41822/ http://eprints.usm.my/41822/1/HADI_MAHMODI_SHEIKH_SARMAST.pdf application/pdf en public masters Universiti Sains Malaysia Pusat Pengajian Sains Fizik |
| institution |
Universiti Sains Malaysia |
| collection |
USM Institutional Repository |
| language |
English |
| topic |
QC1 Physics (General) |
| spellingShingle |
QC1 Physics (General) Sarmast, Hadi Mahmodi Sheikh Simulation And Fabrication Of Ge Islands On Si Metal-Semiconductor-Metal Photodetectors |
| description |
In this thesis, experimental fabrication and theoretical simulation of Ge islands Si based metal-semiconductor-metal photodetectors have been reported. Radio frequency sputtering was used to deposit Ge thin films on silicon substrates. This is followed by rapid thermal annealing to form Ge islands. Not only that the annealing produces Ge islands but also wetting layer. The size and density of the islands are greatly influenced by the annealing time. |
| format |
Thesis |
| qualification_level |
Master's degree |
| author |
Sarmast, Hadi Mahmodi Sheikh |
| author_facet |
Sarmast, Hadi Mahmodi Sheikh |
| author_sort |
Sarmast, Hadi Mahmodi Sheikh |
| title |
Simulation And Fabrication Of Ge Islands On Si Metal-Semiconductor-Metal Photodetectors |
| title_short |
Simulation And Fabrication Of Ge Islands On Si Metal-Semiconductor-Metal Photodetectors |
| title_full |
Simulation And Fabrication Of Ge Islands On Si Metal-Semiconductor-Metal Photodetectors |
| title_fullStr |
Simulation And Fabrication Of Ge Islands On Si Metal-Semiconductor-Metal Photodetectors |
| title_full_unstemmed |
Simulation And Fabrication Of Ge Islands On Si Metal-Semiconductor-Metal Photodetectors |
| title_sort |
simulation and fabrication of ge islands on si metal-semiconductor-metal photodetectors |
| granting_institution |
Universiti Sains Malaysia |
| granting_department |
Pusat Pengajian Sains Fizik |
| publishDate |
2010 |
| url |
http://eprints.usm.my/41822/1/HADI_MAHMODI_SHEIKH_SARMAST.pdf |
| _version_ |
1747820977345003520 |